Method and device for cleaning raw material gas introduction tube used in cvd film forming apparatus

ABSTRACT

An object of the present invention is to provide a method and apparatus for cleaning a source gas introduction pipe, which can prevent strong adhesion of contaminant mainly containing carbon powder on an outer surface of the source gas introduction pipe to easily remove the contaminant in a short period of time. The invention is characterized in that, while compressed air is sprayed toward the contaminant, the contaminant removed by the spray of the compressed air is exhausted outside a system of a deposition chamber by suction and exhausting means so that the contaminant is not transferred to sides of the deposition chamber and a plastic container in which a CVD film is formed, in a process for extracting the source gas introduction pipe from the plastic container after the CVD film is formed on an inner surface of the plastic container.

TECHNICAL FIELD

The present invention relates to a method and an apparatus for cleaninga source gas introduction pipe used in a CVD (Chemical Vapor Deposition)apparatus which forms a CVD film, particularly a carbon film such as aDLC (Diamond-Like Carbon) film and a polymer-like amorphous carbon filmor a silica film containing Si—C—H—O on an inner surface of a plasticcontainer by a CVD method.

BACKGROUND ART

For example, Japanese Patent Application Laid-Open (JP-A) No. 8-53117discloses a deposition apparatus which deposits the DLC film on theinner surface of the plastic container by adopting the CVD method,particularly a plasma CVD method, in order to improve gas barrierproperties and the like. JP-A No. 10-258825 discloses a high-volumeproduction apparatus and a method for producing the DLC film coatingplastic container. Further, JP-A No. 10-226884 discloses an apparatusand a method for producing the DLC film plastic container, which canevenly apply the DLC film coating to the container having a protrusionprotruding outward from an outer surface.

In JP-A No. 8-53117, an inner electrode of the apparatus for producingthe DLC film coated plastic container is made of a conductive materialand the inner electrode also used as piping for introducing source gas.The inner electrode is formed in a pipe shape having a source gas supplyport at a leading end.

DISCLOSURE OF THE INVENTION

In the conventional production apparatus including the producingapparatus disclosed in JP-A No. 8-53117, when the DLC film is formed onthe inner surface of the plastic container, contaminant mainly includingcarbon powder (hereinafter simply referred to as contaminant) adheres tothe outer surface and inner surface of the source gas introduction pipe(inner electrode) which is one of members constituting the productionapparatus. Therefore, when a large amount of DLC film coating containersis produced by repeatedly forming the DLC film on the inner surface ofthe plastic container, e.g. a PET bottle (bottle made of polyethyleneterephthalate), the contaminant is deposited on the source gasintroduction pipe to gradually become thick. Then, when the contaminantreaches a certain thickness (for example, the thickness of about 5 μm),the contaminant flakes away from the source gas introduction pipe. Thecontaminant which flakes away falls down inside the PET bottle.Consequently, a part in which the film is not formed is generated in thePET bottle by the contaminant which falls down inside the PET bottle,and gas barrier properties are decreased, which results in a defective.

The following method can be considered in order to prevent thecontaminant from flaking away inside the PET bottle. Namely, there isthe method in which, before the contaminant flakes away, the productionapparatus is disassembled to detach the source gas introduction pipe,and a worker cleans the outer surface and the inner surface of thesource gas introduction pipe to which the contaminant adheres by filingthe contaminant. When the outer surface and the inner surface of thesource gas introduction pipe are cleaned as described above, thecontaminant should be prevented from flaking away inside the PET bottle.

The adoption of the above-described method can prevent the contaminantfrom flaking away inside the PET bottle. However, the quality of the DLCfilm coated plastic container is decreased unless the contaminant isremoved in each about 200 to about 400 coatings, so that it is necessarythat the source gas introduction pipe is frequently disassembled andcleaned. Therefore, operating efficiency of the DLC film depositionapparatus is extremely decreased.

When the contaminant adheres to the source gas introduction pipe (innerelectrode), plasma discharge becomes unstable or discharge is stopped.

Therefore, the method and the apparatus for cleaning the source gasintroduction pipe without decreasing the operation efficiency of theapparatus are required.

A problem of the invention is to be able to recover the contaminant sothat the contaminant is not transferred to the plastic container or thedeposition chamber while the contaminant is removed in a non-contactmanner by spraying compressed air or blowing ultrasonic air to thesource gas introduction pipe when the contaminant adheres to the innersurface and the outer surface of the source gas introduction pipe. Thereason why the contaminant is removed in the non-contact manner is that,for example, apparatus failure such as deformation of the source gasintroduction pipe is prevented and the generation of the uncoatedportion caused by the adhesion of the contaminant is prevented. Anobject of the invention is to minimize the transfer of the contaminantto the deposition chamber or the plastic container after the depositionby optimizing a spray direction of the compressed air, a blow directionof the ultrasonic air, a position of a suction and exhaust portion, anda magnitude relation between the amount of air and the amount of suctionand exhaust.

Another object of the invention is to intend to shorten a time requiredfor the deposition of the CVD apparatus by simultaneously completing therecovering operation of the contaminant at optimal timing for removingthe contaminant, that is, during extracting operation of the source gasintroduction pipe. At this point, another object of the invention is toprevent the strong adhesion of the contaminant by cleaning the sourcegas introduction pipe in each deposition operation. This is because theadhesion becomes hardy by build-up of the contaminant.

Therefore, another object of the invention is to enable the CVDapparatus to perform continuous running not to decrease productionoperating efficiency of the CVD apparatus by extending an interval ofdisassembly and inspection of the DLC film deposition apparatus.

Similarly, for the source gas introduction pipe used in a rotary typeplasma CVD apparatus of the high-volume production apparatus in which aproduction cycle is performed while a turntable on which the pluralityof deposition chambers are arranged in a circle shape is rotated oneturn, another object of the invention is to prevent the strong adhesionof the contaminant to the outer surface of the source gas introductionpipe, to easily remove the contaminant in a short period of time, toextend the interval of the disassembly and the inspection, and toimprove the production operating efficiency.

Another object of the invention is to further easily sweep out andremove the contaminant without generating a reaction between thecontaminant and the surface of the source gas introduction pipe byforming the substrate material used for the source gas introduction pipewhich also acts as the inner electrode with SUS 304 whose surface ispolished and by limiting the material of the hard gold alloy platingwhich is of the surface treatment to the acid hard gold plating such as99.7Au-0.3Co and 99.8Au-0.2Ni.

Another object of the cleaning method and the cleaning apparatus of theinvention is to propose a process for preventing the contaminant, inwhich the action of the extraction of the source gas introduction pipefrom the deposition chamber is performed and the contaminant is sweptout by utilizing the extracting action of the source gas introductionpipe in both the normal CVD apparatus and the rotary type CVD apparatus.

A method for cleaning a source gas introduction pipe used in a CVDapparatus according to this invention, which cleans contaminant mainlycontaining carbon powder adhering to an outer surface of the source gasintroduction pipe during processes in which a plastic container isaccommodated into a sealable deposition chamber having a function of anouter electrode, source gas is introduced from a source gas introductionpipe which is elevatably inserted into the plastic container and alsoacts as an inner electrode, and the source gas is excited into plasma toform a CVD (Chemical Vapor Deposition) film on an inner surface of theplastic container, is characterized in that, while compressed air issprayed toward the contaminant, the contaminant removed by the spray ofthe compressed air is exhausted outside a system of the depositionchamber by suction and exhausting means so that the contaminant is nottransferred to sides of the deposition chamber and the plastic containerin which the CVD film is formed in a process for extracting the sourcegas introduction pipe from the plastic container after the CVD film isformed on the inner surface of the plastic container.

In a method for cleaning a source gas introduction pipe used in a CVDapparatus according to the invention, it is preferable that thecompressed air is sprayed toward a centripetal direction of the sourcegas introduction pipe from a compressed air spray portion provided in anupper portion of the deposition chamber or at a position above thedeposition chamber. At this point, it is also possible that eachcompressed air is sprayed toward the centripetal direction of the sourcegas introduction pipe from the compressed air spray portions which arearranged at a predetermined interval around the outside of the sourcegas introduction pipe (radially arranged with a center of an axis of thesource gas introduction pipe) and provided in the upper portion of thedeposition chamber or at the position above the deposition chamber.

In a method for cleaning a source gas introduction pipe used in a CVDapparatus according to the invention, it is preferable that thecompressed air and the contaminant are sucked and removed into a suctionand exhaust portion provided at the position above the spray portion bythe suction and exhausting means.

In a method for cleaning a source gas introduction pipe used in a CVDapparatus according to the invention, it is preferable that thecompressed air spray portion is provided in the upper portion of thedeposition chamber or at the position above the deposition chamber, thesuction and exhaust portion is provided at the position above the sprayportion, a second compressed air spray portion is provided at theposition above the suction and exhaust portion, the spray portion spraysthe compressed air from the bottom toward the top and the second sprayportion sprays the compressed air from the top toward the bottom, andthe suction and exhaust portion sucks and removes the compressed air andthe contaminant. Namely, in the spray of the compressed air, thecompressed air spray portions are arranged opposite to each other whilelocated around the outside of the source gas introduction pipe and atthe different positions in a vertical direction, one of the compressedair spray portions provided in the upper portion of the depositionchamber or at the position above the deposition chamber sprays thecompressed air from the top toward the bottom, and the other sprayportion sprays the compressed air from the bottom toward the top.

In a method for cleaning a source gas introduction pipe used in a CVDapparatus according to the invention, it is preferable that the amountof suction and exhaust by the suction and exhausting means is largerthan the amount of air supply of the compressed air. Therefore, thesuction and exhausting means performs the powerful suction and exhaust.

In a method for cleaning a source gas introduction pipe used in a CVDapparatus according to the invention, it is preferable that depositionof the CVD film is performed in the plurality of deposition chambersarranged in a circle on a turntable, the contaminant mainly containingthe carbon powder which adhere to the outer surface of the source gasintroduction pipe is removed by spraying the compressed air in theprocess for extracting the source gas introduction pipe from the plasticcontainer and the process for sucking and exhausting the removedcontaminant outside the system of the deposition chamber is completed,while the turntable is rotated one turn.

A method for cleaning a source gas introduction pipe used in a CVDapparatus according to this invention, which cleans contaminant mainlycontaining carbon powder adhering to an outer surface of the source gasintroduction pipe during processes in which a plastic bottle isaccommodated into a sealable deposition chamber having a function of anouter electrode, source gas is introduced from a source gas introductionpipe which is elevatably inserted into the plastic bottle and also actsas an inner electrode, and the source gas is excited into plasma to forma CVD film on an inner surface of the plastic bottle, is characterizedin that, while ultrasonic air is blown toward the contaminant, thecontaminant removed by the blow of the ultrasonic air is exhaustedoutside a system of the deposition chamber by suction and exhaustingmeans so that the contaminant is not transferred to sides of thedeposition chamber and the plastic container in which the CVD film isformed in a process for extracting the source gas introduction pipe fromthe plastic container after the CVD film is formed on the inner surfaceof the plastic container.

In a method for cleaning a source gas introduction pipe used in a CVDapparatus according to the invention, it is preferable that theultrasonic air is blown toward a centripetal direction of the source gasintroduction pipe from an ultrasonic air blow portion provided in anupper portion of the deposition chamber or at a position above thedeposition chamber. At this point, it is also possible that eachultrasonic air is blown toward the centripetal direction of the sourcegas introduction pipe from the ultrasonic air blow portions which arearranged at a predetermined interval around the outside of the sourcegas introduction pipe (radially arranged with a center of an axis of thesource gas introduction pipe) and provided in the upper portion of thedeposition chamber or at the position above the deposition chamber.

In a method for cleaning a source gas introduction pipe used in a CVDapparatus according to the invention, it is preferable that theultrasonic air and the contaminant are sucked and removed into a suctionand exhaust portion provided at the position above the blow portion bythe suction and exhausting means.

In a method for cleaning a source gas introduction pipe used in a CVDapparatus according to the invention, it is preferable that theultrasonic air blow portion is provided in the upper portion of thedeposition chamber or at the position above the deposition chamber, thesuction and exhaust portion is provided at the position above the blowportion, a second ultrasonic air blow portion is provided at theposition above the suction and exhaust portion, the blow portion blowsthe ultrasonic air from the bottom toward the top, the second blowportion blows the ultrasonic air from the top toward the bottom, and thesuction and exhaust portion sucks and removes the ultrasonic air and thecontaminant. Namely, in the blow of the ultrasonic air, the ultrasonicair blow portions are arranged opposite to each other while locatedaround the outside of the source gas introduction pipe and at thedifferent positions in a vertical direction, one of the ultrasonic airblow portions provided in the upper portion of the deposition chamber orat the position above the deposition chamber blows the ultrasonic airfrom the top toward the bottom, and the other blow portion blows theultrasonic air from the bottom toward the top.

In a method for cleaning a source gas introduction pipe used in a CVDapparatus according to the invention, it is preferable that the amountof suction and exhaust by the suction and exhausting means is largerthan the amount of air supply of the ultrasonic air. Therefore, thesuction and exhausting means performs the powerful suction and exhaust.

In a method for cleaning a source gas introduction pipe used in a CVDapparatus according to the invention, it is preferable that depositionof the CVD film is performed in the plurality of deposition chambersarranged in a circle on a turntable, the contaminant mainly containingthe carbon powder which adhere to the outer surface of the source gasintroduction pipe is removed by blowing the ultrasonic air in theprocess for extracting the source gas introduction pipe from the plasticcontainer and the process for sucking and exhausting the removedcontaminant outside the system of the deposition chamber is completed,while the turntable is rotated one turn.

An apparatus for cleaning a source gas introduction pipe used in a CVDapparatus according to this invention, which cleans contaminant mainlycontaining carbon powder adhering to an outer surface of the source gasintroduction pipe during processes in which a plastic bottle isaccommodated into a sealable deposition chamber having a function of anouter electrode, source gas is introduced from a source gas introductionpipe which is elevatably inserted into the plastic bottle and also actsas an inner electrode, and the source gas is excited into plasma to forma CVD film on an inner surface of the plastic bottle, is characterizedby comprising source gas introduction pipe extracting means forextracting the source gas introduction pipe from the plastic containerin synchronization with a time after the formation of the CVD film onthe inner surface of the plastic container, compressed air sprayingmeans for spraying compressed air toward the contaminant, and suctionand exhausting means for exhausting the contaminant removed by the sprayof the compressed air outside a system of the deposition chamber so thatthe contaminant is not transferred to sides of the deposition chamberand the plastic container in which the CVD film is formed.

In an apparatus for cleaning a source gas introduction pipe used in aCVD apparatus according to the invention, it is preferable that a sprayportion of the compressed air sprayed by the compressed air sprayingmeans is arranged around the outside of the source gas introduction pipeand in an upper portion of the deposition chamber or at a position abovethe deposition chamber. Namely, it is also possible that the compressedair spraying means is formed by the tapered compressed air spray portionarranged at a predetermined interval around the outside of the sourcegas introduction pipe (radially arranged with a center of an axis of thesource gas introduction pipe).

In an apparatus for cleaning a source gas introduction pipe used in aCVD apparatus according to the invention, it is preferable that asuction and exhaust portion for sucking and removing the compressed airand the contaminant is arranged around the outside of the source gasintroduction pipe and at the position above the spray portion.

In an apparatus for cleaning a source gas introduction pipe used in aCVD apparatus according to the invention, it is preferable that thespray portion of the compressed air sprayed by the compressed airspraying means is arranged around the outside of the source gasintroduction pipe and in the upper portion of the deposition chamber orat the position above the deposition chamber, the suction and exhaustportion for sucking and removing the compressed air and the contaminantis arranged around the outside of the source gas introduction pipe andat the position above the spray portion, a second spray portion of thecompressed air sprayed by the compressed air spraying means is arrangedaround the outside of the source gas introduction pipe and at theposition above the suction and exhaust portion, a compressed air spraydirection of the spray portion is orientated upward, and the compressedair spray direction of the second spray portion is orientated downward.Namely, the tapered compressed air spray portions are arranged oppositeto each other while the upper position alternates with the bottomposition around the outside of the source gas introduction pipe, one ofthe tapered compressed air spray portions is formed so as to spray thecompressed air from the top toward the bottom, and the other sprayportion is formed so as to spray the compressed air from the bottomtoward the top.

An apparatus for cleaning a source gas introduction pipe used in a CVDapparatus according to this invention, which cleans contaminant mainlycontaining carbon powder adhering to an outer surface of the source gasintroduction pipe during processes in which a plastic bottle isaccommodated into a sealable deposition chamber having a function of anouter electrode, source gas is introduced from a source gas introductionpipe which is elevatably inserted into the plastic bottle and also actsas an inner electrode, and the source gas is excited into plasma to forma CVD film on an inner surface of the plastic bottle, is characterizedby comprising source gas introduction pipe extracting means forextracting the source gas introduction pipe from the plastic containerin synchronization with a time after the formation of the CVD film onthe inner surface of the plastic container, ultrasonic air blowing meansfor blowing ultrasonic air toward the contaminant, and suction andexhausting means for exhausting the contaminant removed by the blow ofthe ultrasonic air outside a system of the deposition chamber so thatthe contaminant is not transferred to sides of the deposition chamberand the plastic container in which the CVD film is formed.

In an apparatus for cleaning a source gas introduction pipe used in aCVD apparatus according to the invention, it is preferable that a blowportion of the ultrasonic air blown by the ultrasonic air blowing meansis arranged in an upper portion of the deposition chamber or at aposition above the deposition chamber. At this point, it is alsopossible that the ultrasonic air blowing means which is arranged at apredetermined interval around the outside of the source gas introductionpipe (radially arranged with a center of an axis of the source gasintroduction pipe) is formed by an ultrasonic oscillator which isprovided in the upper portion of the deposition chamber or at theposition above the deposition chamber.

In an apparatus for cleaning a source gas introduction pipe used in aCVD apparatus according to the invention, it is preferable that asuction and exhaust portion for sucking and removing the ultrasonic airand the contaminant is arranged at the position above the blow portion.

In an apparatus for cleaning a source gas introduction pipe used in aCVD apparatus according to the invention, it is preferable that the blowportion of the ultrasonic air blown by the ultrasonic air blowing meansis arranged in the upper portion of the deposition chamber or at theposition above the deposition chamber, the suction and exhaust portionfor sucking and removing the ultrasonic air and the contaminant isarranged at the position above the blow portion, a second blow portionof the ultrasonic air blown by the ultrasonic air blowing means isarranged at the position above the suction and exhaust portion, anultrasonic air blow direction of the blow portion is orientated upward,and the ultrasonic air blow direction of the second blow portion isorientated downward. Namely, the ultrasonic air blowing means arearranged opposite to each other while the upper position alternates withthe bottom position around the outside of the source gas introductionpipe, one of the ultrasonic air blow portions formed by the ultrasonicoscillator provided in an upper portion of the deposition chamber or ata position above the deposition chamber is formed so as to blow theultrasonic air from the top toward the bottom, and the other blowportion is formed so as to blow the ultrasonic air from the bottomtoward the top.

In the case where the source gas introduction pipe does not also act asthe inner electrode as described below, plasma generating means in thedeposition chamber is used in a micro wave generation apparatus. Namely,a method for cleaning a source gas introduction pipe used in a CVDapparatus according to this invention, which cleans contaminant mainlycontaining carbon powder adhering to an outer surface of the source gasintroduction pipe during processes in which a plastic bottle isaccommodated into a sealable deposition chamber having a function of anouter electrode, source gas is introduced from a source gas introductionpipe which is elevatably inserted into the plastic bottle, and thesource gas is excited into plasma with a micro wave to form a CVD filmon an inner surface of the plastic bottle, is characterized in that,while compressed air is sprayed toward the contaminant or ultrasonic airis blown toward the contaminant, the contaminant removed by the spray ofthe compressed air or the blow of the ultrasonic air is exhaustedoutside a system of the deposition chamber by suction and exhaustingmeans so that the contaminant is not transferred to sides of thedeposition chamber and the plastic container in which the CVD film isformed in a process for extracting the source gas introduction pipe fromthe plastic container after the CVD film is formed on the inner surfaceof the plastic container.

In an apparatus for cleaning a source gas introduction pipe used in aCVD apparatus according to this invention, which cleans contaminantmainly containing carbon powder adhering to an outer surface of thesource gas introduction pipe during processes in which a plastic bottleis accommodated into a sealable deposition chamber having a function ofan outer electrode, source gas is introduced from a source gasintroduction pipe which is elevatably inserted into the plastic bottle,and the source gas is excited into plasma with a micro wave to form aCVD film on an inner surface of the plastic bottle, is characterized bycomprising source gas introduction pipe extracting means for extractingthe source gas introduction pipe from the plastic container insynchronization with a time after the formation of the CVD film on theinner surface of the plastic container, compressed air spraying meansfor spraying compressed air toward the contaminant, and suction andexhausting means for exhausting the contaminant removed by the spray ofthe compressed air outside a system of the deposition chamber so thatthe contaminant is not transferred to sides of the deposition chamberand the plastic container in which the CVD film is formed.

In an apparatus for cleaning a source gas introduction pipe used in aCVD apparatus according to this invention, which cleans contaminantmainly containing carbon powder adhering to an outer surface of thesource gas introduction pipe during processes in which a plastic bottleis accommodated into a sealable deposition chamber having a function ofan outer electrode, source gas is introduced from a source gasintroduction pipe which is elevatably inserted into the plastic bottle,and the source gas is excited into plasma with a micro wave to form aCVD film on an inner surface of the plastic bottle, is characterized bycomprising source gas introduction pipe extracting means for extractingthe source gas introduction pipe from the plastic container insynchronization with a time after the formation of the CVD film on theinner surface of the plastic container, ultrasonic air blowing means forblowing ultrasonic air toward the contaminant, and suction andexhausting means for exhausting the contaminant removed by the blow ofthe ultrasonic air outside a system of the deposition chamber so thatthe contaminant is not transferred to sides of the deposition chamberand the plastic container in which the CVD film is formed.

In an apparatus for cleaning a source gas introduction pipe used in aCVD apparatus according to the invention, it is preferable that asubstrate material used for the source gas introduction pipe is made ofSUS 304 or SUS 316 whose surface is polished or a material in which SUS304 or SUS 316 is coated with acid hard gold plating such as99.7Au-0.3Co and 99.8Au-0.2Ni which is of the material of surfacetreatment.

In the invention, the contaminant mainly containing the carbon powderwhich adhere to the outer surface of the source gas introduction pipecan be rapidly and easily removed by spraying the compressed air towardthe contaminant or blowing the ultrasonic air toward the contaminant ina non-contact manner. Since the contaminant is removed in thenon-contact manner, there is no fear that the source gas introductionpipe is deformed. Further, proper vibration is added to a pipe wall bypressure of the compressed air, so that the contaminant can beeffectively removed. Since the removed contaminant is exhausted to theoutside by the suction and exhausting means, the contaminant peeled offfrom the surface of the source gas introduction pipe is not transferredto the sides of the deposition chamber and the plastic container. Inparticular, the compressed air is sprayed from the bottom toward the topand the contaminant and the air are sucked and exhausted at the positionabove the spray of the compressed air, so that the contaminanttransferred to the deposition chamber and the plastic container can beminimized. When the compressed air is sprayed from the top toward thebottom, the contaminant is easily transferred to the deposition chamberand the plastic container which are located at the lower portion.

The time required for the deposition of the CVD apparatus can beshortened by simultaneously completing recovering operation of thecontaminant during the extracting operation of the source gasintroduction pipe. Further, the strong adhesion of the contaminant canbe prevented by cleaning the source gas introduction pipe in eachdeposition.

Therefore, the interval of disassembly and inspection of the DLC filmdeposition apparatus can be prolonged to perform the continuous running,and the production operating efficiency of the CVD apparatus is notdecreased.

The invention can be similarly applied to the source gas introductionpipe used in a rotary type of plasma CVD apparatus. The contaminant canbe easily removed while the turntable is rotated one turn, thecontinuous running of the deposition operation can be performed.Further, the contaminant can be easily removed in a short period oftime, the interval of the disassembly and the inspection can beprolonged, and the production operating efficiency can be improved.

In the invention, the substrate material used for the source gasintroduction pipe which also acts as the inner electrode is made of SUS304 whose surface is polished, and the material of the hard gold alloyplating which is of the surface treatment is limited to the acid hardgold plating such as 99.7Au-0.3Co and 99.8Au-0.2Ni. Therefore, thecontaminant can be further easily swept out and removed withoutgenerating the reaction between the contaminant and the surface of thesource gas introduction pipe.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic diagram showing a mode of a deposition chamber ofa CVD apparatus and a device for cleaning a source gas introduction pipeaccording to the invention;

FIG. 2 is a schematic diagram showing a mode of the device for cleaningthe source gas introduction pipe used in the CVD apparatus according tothe invention, FIG. 2A is a longitudinal sectional view showing arelationship between a supply system and an exhaust system, FIG. 2B is atransverse sectional view on a compressed air supply side, and FIG. 2Cis a transverse sectional view on a exhaust side of carbon powder andthe like;

FIG. 3 is an inner electrode photograph after 500 batches performed byan inside chamber compressed air blow method showing an embodiment ofthe invention are completed;

FIG. 4 shows an A part of an inner electrode bottom portionmacrophotograph (50 times) after 500 batches are completed;

FIG. 5 shows a B part of an inner electrode body portion macrophotograph(50 times) after 500 batches are completed;

FIG. 6 shows a C part of an inner electrode bottle mouth portionmacrophotograph (50 times) after 500 batches are completed;

FIG. 7 shows a D part of an inner electrode exhaust manifold portionmacrophotograph (50 times) after 500 batches are completed;

FIG. 8 shows the inner electrode photograph after 2000 batches arecompleted;

FIG. 9 shows the A part of the inner electrode bottom portionmacrophotograph (50 times) after 2000 batches are completed;

FIG. 10 shows the B part of the inner electrode body portionmacrophotograph (50 times) after 2000 batches are completed;

FIG. 11 shows the C part of the inner electrode bottle mouth portionmacrophotograph (50 times) after 2000 batches are completed;

FIG. 12 shows the D part of the inner electrode exhaust manifold portionmacrophotograph (50 times) after 2000 batches are completed;

FIG. 13 shows the inner electrode photograph after 4500 batches arecompleted;

FIG. 14 shows the A part of the inner electrode bottom portionmacrophotograph (50 times) after 4500 batches are completed;

FIG. 15 shows the B part of the inner electrode body portionmacrophotograph (50 times) after 4500 batches are completed;

FIG. 16 shows the C part of the inner electrode bottle mouth portionmacrophotograph (50 times) after 4500 batches are completed;

FIG. 17 shows the inner electrode photograph after 7000 batches arecompleted;

FIG. 18 shows the A part of the inner electrode bottom portionmacrophotograph (50 times) after 7000 batches are completed;

FIG. 19 shows the B part of the inner electrode body portionmacrophotograph (50 times) after 7000 batches are completed;

FIG. 20 shows the C part of the inner electrode bottle mouth portionmacrophotograph (50 times) after 7000 batches are completed;

FIG. 21 shows the D part of the inner electrode exhaust manifold portionmacrophotograph (50 times) after 7000 batches are completed;

FIG. 22 is a schematic diagram showing an outside chamber ultrasonic airblow method which another mode of the device for cleaning the source gasintroduction pipe used in the CVD apparatus according to the invention,and FIGS. 22A to 22E show operation states;

FIG. 23 is an inner electrode photograph after 500 batches performed byan outside chamber ultrasonic air blow method showing another embodimentof the invention are completed;

FIG. 24 shows an inner electrode photograph after 2000 batches arecompleted;

FIG. 25 shows an A part of an inner electrode bottom portionmacrophotograph (50 times) after 2000 batches are completed;

FIG. 26 shows a B part of an inner electrode body portionmacrophotograph (50 times) after 2000 batches are completed;

FIG. 27 shows a C part of an inner electrode bottle mouth portionmacrophotograph (50 times) after 2000 batches are completed;

FIG. 28 shows a D part of an inner electrode exhaust manifold portionmacrophotograph (50 times) after 2000 batches are completed;

FIG. 29 shows the inner electrode photograph after 4500 batches arecompleted;

FIG. 30 shows the A part of the inner electrode bottom portionmacrophotograph (50 times) after 4500 batches are completed;

FIG. 31 shows the B part of the inner electrode body portionmacrophotograph (50 times) after 4500 batches are completed;

FIG. 32 shows the C part of the inner electrode bottle mouth portionmacrophotograph (50 times) after 4500 batches are completed;

FIG. 33 shows the D part of the inner electrode exhaust manifold portionmacrophotograph (50 times) after 4500 batches are completed;

FIG. 34 shows the inner electrode photograph after 7000 batches arecompleted;

FIG. 35 shows the A part of the inner electrode bottom portionmacrophotograph (50 times) after 7000 batches are completed;

FIG. 36 shows the B part of the inner electrode body portionmacrophotograph (50 times) after 7000 batches are completed;

FIG. 37 shows the C part of the inner electrode bottle mouth portionmacrophotograph (50 times) after 7000 batches are completed;

FIG. 38 shows the D part of the inner electrode exhaust manifold portionmacrophotograph (50 times) after 7000 batches are completed;

FIG. 39 is a view showing a position relationship among measurementpoints A, B, C, and D;

FIG. 40 shows an inner electrode photograph of a comparative exampleafter 500 batches are completed;

FIG. 41 shows an Apart of an inner electrode bottom portionmacrophotograph (50 times) of the comparative example after 500 batchesare completed;

FIG. 42 shows a B part of an inner electrode body portionmacrophotograph (50 times) of the comparative example after 500 batchesare completed;

FIG. 43 shows a C part of an inner electrode bottle mouth portionmacrophotograph (50 times) of the comparative example after 500 batchesare completed;

FIG. 44 shows a D part of an inner electrode exhaust manifold portionmacrophotograph (50 times) of the comparative example after 500 batchesare completed;

FIG. 45 shows the inner electrode photograph of the comparative exampleafter 600 batches are completed;

FIG. 46 shows the A part of the inner electrode bottom portionmacrophotograph (50 times) of the comparative example after 600 batchesare completed;

FIG. 47 shows the B part of the inner electrode body portionmacrophotograph (50 times) of the comparative example after 600 batchesare completed;

FIG. 48 shows the C part of the inner electrode bottle mouth portionmacrophotograph (50 times) of the comparative example after 600 batchesare completed;

FIG. 49 shows the D part of the inner electrode exhaust manifold portionmacrophotograph (50 times) of the comparative example after 600 batchesare completed;

FIG. 50 is a schematic diagram showing a second mode of the depositionchamber of the CVD apparatus and the device for cleaning the source gasintroduction pipe according to the invention; and

FIG. 51 is a partial conceptual view of an upper portion of thedeposition chamber when ultrasonic air blowing means is provided insteadof compressed air spraying means.

BEST MODE FOR CARRYING OUT THE INVENTION

Referring to the accompanying drawings, embodiments will be describedbelow. However, the invention is not limited to the embodiments. Whenthe member is commonly used in each drawing, the component isrepresented by the same reference numerals. Although the examples aredescribed by adopting the source gas introduction pipe which also actsas the inner electrode as an example, needless to say, the invention canbe also applied to the source gas introduction pipe which does not actas the inner electrode. Further, similarly to the case of the source gasintroduction pipe, the cleaning method can be applied to the innerelectrode in the case where the source gas introduction pipe does notact as the inner electrode.

The CVD apparatus to which the invention is applied will be generallydescribed first. FIG. 1 is a schematic diagram showing a mode of thedeposition chamber of the CVD apparatus and the device for cleaning thesource gas introduction pipe according to the invention. The CVDapparatus according to the invention is a plasma CVD apparatus includinga deposition chamber 1, a source gas introduction pipe 2 which also actsas the inner electrode introducing the source gas excited into theplasma state into the inside of a plastic container 8 accommodated inthe deposition chamber 1, high frequency supplying means (not shown) forsupplying high frequency to an outer electrode 6 of the depositionchamber 1, compressed air spraying means 3 for removing contaminantwhich mainly contains carbon powder adhering to an outer surface of theinner electrode (source gas introduction pipe) 2, and powerful suctionand exhausting means 4 for sucking and removing the contaminant so thatthe contaminant removed from the surface of the source gas introductionpipe 2 is not transferred onto the sides of the deposition chamber 1 andthe plastic container 8 in which the CVD film is formed. The CVDapparatus is one in which the CVD film is formed on the inner surface ofthe plastic container 8 by supplying the high frequency to the outerelectrode 6 to excite the source gas into the plasma state in theplastic container 8. In the CVD apparatus, it is possible that onedeposition chamber or the plurality of deposition chambers is arranged.In the case where the plurality of deposition chambers is arranged, itis possible to use a batch type CVD apparatus in which the deposition issimultaneously performed in all the deposition chambers, or it ispossible to use a rotary type continuous CVD apparatus in which theplurality of deposition chambers are placed on a turntable.

The deposition chamber 1 comprises the outer electrode 6 whichaccommodates the plastic container 8, the source gas introduction pipe 2which also acts as the inner electrode which is connected to a groundwhile elevatably arranged inside the plastic container 8, and a cover 9which is openable and closable. The deposition chamber 1 forms asealable vacuum chamber.

The cover 9 is formed by an electrically conductive member. The cover 9includes a lower cover 9 a arranged in an upper portion of thedeposition chamber 1 and an upper cover 9 b arranged on the upperportion of the lower cover 9 a. The upper cover 9 b is designed to beelevatable while supporting the source gas introduction pipe 2 whichalso acts as the inner electrode. Therefore, the source gas introductionpipe 2 integral with the upper cover 9 b can be elevated by elevatingthe upper cover 9 b. An insulating member 10 is provided on the lowersurface of the cover 9. When the source gas introduction pipe 2 whichalso acts as the inner electrode is inserted into the plastic container8, the inner electrode 2 and the outer electrode 6 are insulated fromeach other by the insulating member 10.

Source gas introduction pipe extracting means (not shown) is one whichextracts the source gas introduction pipe 2 from the inside of theplastic container at timing after the CVD film is formed on the innersurface of the plastic container 8. For example, the source gasintroduction pipe extracting means is a mechanism which is connected tothe upper cover 9 b to elevate the upper cover 9 b.

The lower cover 9 a and the upper cover 9 b are sealed from the outsidewith an O-ring 13 arranged therebetween.

An opening communicating with an accommodation space in the outerelectrode 6 is provided in the cover 9. The source gas introduction pipe2 is inserted into the opening. A compressed air spray portion 11 forspraying the air supplied from the compressed air spraying means 3toward the source gas introduction pipe 2 is provided in the innersurface of the opening of the cover 9. It is preferable to generate thepowerful compressed air by forming the spray portion 11 in a taperedshape. A suction and exhausting portion 12 for sucking and removing boththe compressed air sprayed and the removed contaminant is provided inthe inner surface of the opening of the cover 9. The suction and exhaustportion 12 is connected to the suction and exhausting means 4. The airis sucked by actuating the suction and exhausting means 4 while thesuction and exhaust portion 12 function as a suction port. At thispoint, as shown in FIG. 1, it is possible that the compressed air issprayed upward from the spray portion 11 and the air is sucked into thesuction and exhaust portion 12 provided above the spray portion 11. Thetransfer of the contaminant to the deposition chamber and the plasticcontainer can be prevented by setting a wind direction of the compressedair upward.

FIG. 2 is a schematic diagram showing a mode of the device for cleaningthe source gas introduction pipe used in the CVD apparatus according tothe invention. FIG. 2A is referred to first. When the source gasintroduction pipe (inner electrode) is lifted, the compressed air issprayed toward the source gas introduction pipe through the inside ofthe cover 9. As shown in FIG. 2B, the spray of the compressed air isperformed toward a centripetal direction while an axial center of thesource gas introduction pipe is set to the center. This allows thecontaminant adhering to the outer surface of the source gas introductionpipe to be removed evenly. As shown in FIG. 2A, the removed contaminantand the air from the compressed air are sucked and exhausted above thespray portion. This is because the contaminant is prevented from fallingdown to a mouth portion to mix into the inside of the container. Asshown in FIG. 2C, the exhaust is performed toward a radial directionwhile the axial center of the source gas introduction pipe is set to thecenter.

It is possible that the spray portion and the suction and exhaustportion which are provided in the cover are formed in a second modeshown below. FIG. 50 is a schematic diagram showing the second mode ofthe deposition chamber of the CVD apparatus and the device for cleaningthe source gas introduction pipe according to the invention. In theapparatus of the second mode, a spray portion 11 a of the compressed airsprayed by the compressed air spraying means 3 is arranged in the upperportion of the deposition chamber 1 or at a position above thedeposition chamber 1, and in a periphery of the outer surface of thesource gas introduction pipe 2. The suction and exhaust portion 12 forsucking and removing the compressed air and the contaminant is arrangedin the periphery of the outer surface of the source gas introductionpipe 2 at a position above the spray portion 11 a. Further, a secondspray portion 11 b of the compressed air sprayed from the compressed airspraying means 3 is arranged in the periphery of the outer surface ofthe source gas introduction pipe 2 at a position above the suction andexhaust portion 12. The compressed air spray direction of the sprayportion 11 a is directed upward, the compressed air spray direction ofthe second spray portion 11 b is directed downward, and the air issucked into the suction and exhaust portion 12 arranged therebetween.Therefore, the compressed air and the contaminant can be removed withoutfly-off.

In the first mode and the second mode, the compressed air and thecontaminant can be further removed without fly-off by making the amountof suction and exhaust by the suction and exhausting means 4 larger thanthe amount of air supply of the compressed air. In this case, it ispreferable that the amount of suction and exhaust is equal to or largerthan 1.5 times of the amount of air supply of the compressed air.

A space is formed inside the outer electrode 6, and the space is theaccommodation space for accommodating the plastic container 8 to becoated, e.g. a PET bottle which is of the bottle made of polyethyleneterephthalate. The accommodation space in the outer electrode 6 isformed so as to be able to accommodate the plastic container 8accommodated therein. Namely, it is preferable that the accommodationspace is formed so as to be slightly larger than an outer shape of theplastic container 8. Namely, it is preferable that an inner wall surfaceof the accommodation space of the container is formed in the shapesurrounding a neighborhood of the outer surface of the plastic container8, particularly in the shape geometrically similar to the plasticcontainer. However, in the case where bias voltage is applied to theinner surface of the plastic container 8, it is not necessary that theinner wall surface of the accommodation space in the outer electrode isformed in the shape surrounding the neighborhood of the outer surface ofthe plastic container 8, and it is possible that a gap is formed betweenthe inner wall surface of the accommodation space and the outer surfaceof the plastic container 8.

The accommodation space in the outer electrode 6 is sealed from theoutside by the O-ring (not shown) arranged between the insulating member10 and the cover 9.

The source gas introduction pipe 2 which also acts as the innerelectrode is arranged in the outer electrode 6 and arranged inside theplastic container 8. The source gas introduction pipe 2 which also actsas the inner electrode is supported by the upper cover 9 b and movedelevatably with the upper cover 9 b. A tip of the source gasintroduction pipe 2 which also acts as the inner electrode is arrangedinside the space in the outer electrode 6 and inside the plasticcontainer 8 accommodated in the outer electrode 6. A gas outlet isprovided at the tip of the source gas introduction pipe 2. Further, thesource gas introduction pipe 2 which acts as the inner electrode isconnected to a ground.

It is preferable that the source gas introduction pipe 2 which acts asthe inner electrode is formed by a conductive tubular base plated with ahard gold alloy. In this case, it is preferable that the conductivetubular base is made of a SUS 304 material whose surface is polished.This is because SUS 304 has corrosion resistance and high strength. Itis preferable that the polishing is performed by machining to finish SUS304 to a mirror surface of buff #600. It is also possible that theconductive tubular base is made of SUS 316.

The reason why the hard gold alloy plating is adopted is that a reactionwith the contaminant is suppressed. It is preferable that a thickness ofplating ranges 2 to 10 μm. It is preferable that a kind of the hard goldalloy plating is acid hard gold plating such as 99.7Au-0.3Co and99.8Au-0.2Ni. Although pure gold plating has the best corrosionresistance, the pure gold plating has weak mechanical strength such aswear resistance and hardness. The mechanical strength such as thecorrosion resistance, the wear resistance, and the hardness is improvedin the acid hard gold plating such as 99.7Au-0.3Co and 99.8Au-0.2Ni, sothat the acid hard gold plating is suitable for a plating material ofthe inner electrode. Although the hardness of other gold alloys (25Agand 20Cu) is higher than that of the acid hard gold plating, they areinferior to the acid hard gold plating in the wear resistance and thecorrosion resistance. The method in which the polishing (mirror surfacepolishing of buff #600) is performed to the SUS 304 material by themachining, electroless plating of nickel is performed to the polishedSUS 304 material, and then the gold plating is performed on the nickelelectroless plating layer is adopted as the gold plating method.

In order to prevent the generation of the plasma in the pipe of theinner electrode, it is preferable that an inner diameter of the sourcegas introduction pipe 2 which also acts the inner electrode is not morethan 1.5 mm, and it is more preferable that the source gas introductionpipe 2 is equal to or less than 1.0 mm. The generation of thecontaminant can be suppressed in the pipe of the inner electrode byforming the inner diameter of the source gas introduction pipe 2 notmore than 1.5 mm. In order to secure the mechanical strength, it ispreferable that the thickness of the inner electrode is not lower than 1mm.

By forming the source gas introduction pipe 2 which also acts as theinner electrode as described above, the fixing of the contaminant can beprevented and the plasma discharge can be stabilized.

The plastic container includes the container which is used with thecover, a stopper, or a seal and the container which is used in the openstate without the cover, the stopper, or the seal. A size of the openingdepends on contents. The plastic container includes one which has apredetermined thickness having proper rigidity and one which is formedby a sheet material not having the rigidity. Beverages such as acarbonated beverage, a fruit juice beverage, and a soft drink,pharmaceutical products, agricultural chemicals, dehydrated foods forwhich moisture absorption is bad, and the like can be cited as anexample of filling materials of the plastic container according to theinvention.

Polyethylene terephthalate resin (PET), polyethylene terephthalatecopolyester resin (copolymer in which cyclohexane dimethanol is used foran alcohol component of polyester instead of ethylene glycol is referredto as PETG, manufactured by Eastman Chemical Company), polybutyleneterephthalate resin, polyethylene naphthalate resin, polyethylene resin,polypropylene resin (PP), cycloolefin copolymer resin (COC, cyclicolefin copolymerization), ionomer resin, poly-4-methylpentene-1 resin,polymethyl methacrylate resin, polystylene resin, ethylene-vinyl alcoholcopolymerization resin, acrylonitrile resin, polyvinyl chloride resin,polyvinylidene chloride resin, polyamide resin, polyamideimide resin,polyacetal resin, polycarbonate resin, polysulfone resin,tetrafluoroethylene resin, acrylonitrile-styrene resin, andacrylonitrile-butadiene-styrene resin can be cited as an example ofresins used in forming the plastic container. Among these resins, PET isparticularly preferable to the plastic container.

The source gas introduction pipe 2 introduces the source gas suppliedfrom a source gas generation source 5 to the inside of the plasticcontainer. The source gas generation source generates hydrocarbon gassuch as acetylene.

The source gas introduction pipe 2 supplies the source gas to thedeposition chamber 1. In the case where the plurality of depositionchambers is provided, it is possible that the source gas generationsource 5 is provided in each deposition chamber, or it is possible thatone source gas generation source is diverged to introduce the source gasto all the deposition chambers. In this case, branch pipes correspondingto the number of deposition chambers are provided between the source gasgeneration source 5 and a mass-flow controller (not shown). Themass-flow controllers are placed so that the number of mass-flowcontrollers is equal to the number of deposition chambers. In eithercase, the invention is not limited to the number of the source gasgeneration sources along as the predetermined amount of source gas canbe supplied to each deposition chamber.

For example, in the case where a DLC film is formed, aliphatichydrocarbons, aromatic hydrocarbons, oxygen-containing hydrocarbons,nitrogen-containing hydrocarbons, and the like which are gas or liquidat room temperature are used as the source gas. In particular, it isdesirable to benzene, toluene, o-xylene, m-xylene, p-xylene,cyclohexane, and the like whose carbon number is at least six. In thecase where the invention is used for the container such as the foodcontainer, from the viewpoint of hygiene, it is preferable to usealiphatic hydrocarbons, particularly ethylene hydrocarbon such asethylene, propylene, and butylene or acetylene hydrocarbon such asacetylene, allylene, and 1-butyne. These sources can be used alone, orthe sources can be used as mixed gas containing at least two kinds ofsources. Further, it is also possible to use these kinds of gas bydiluting the gas with a rare gas such as argon and helium. In the casewhere the silicon containing DLC film is formed, silicon containinghydrocarbon gas is used.

The DLC film formed on the inner surface of the plastic container is thefilm referred to as i-carbon film or hydrogenated amorphous carbon film(a-C:H), and the DLC film includes a hard carbon film. The DLC film isthe amorphous carbon film, and the DLC film also has Sp³ bond.Hydrocarbon gas, e.g. acetylene gas is used as the source gas forforming the DLC film. Silicon containing hydrocarbon gas is used as thesource gas for forming the silicon containing DLC film. The containerwhich can be used for a one-way container or a returnable container canbe obtained as the container for the carbonated beverage, sparklingdrink, or the like by forming the DLC film on the inner surface of theplastic container.

The accommodation space in the deposition chamber 1 is connected to avacuum pump (not shown) through a pipe (not shown) and a vacuum valve.The vacuum pump is connected to an exhaust duct (not shown). In the caseof the plurality of deposition chambers, it is possible thatevacuation-systems are gathered together to one vacuum pump to performthe evacuation, or it is possible that the plurality of vacuum pumpsshares the evacuation.

High-frequency supplying means includes fixed matching device (notshown) attached to the outer electrode and a high-frequency power source(not shown) connected to the fixed matching device. The high-frequencypower source is one which generates the high frequency which is of theenergy for exciting the source gas into the plasma in the plasticcontainer. In order to perform matching quickly to reduce a timenecessary to the ignition of the plasma, it is preferable that thehigh-frequency power source is a transistor type high-frequency powersource and the high-frequency in which the matching is performed in afrequency movable manner or in an electronic manner. The frequency ofthe high-frequency power source ranges from 100 kHz to 1000 MHz. Forexample, 13.56 MHz which is of an industrial frequency is used.

Instead of the supply of the high-frequency power to the outer electrode6, it is possible that a micro wave is supplied toward the inside of thecontainer to excite the source gas into the plasma. In this case,although the source gas introduction pipe does not act as the innerelectrode, similarly the contaminant adheres, so that the contaminantcan be similarly removed by the cleaning method and apparatus accordingto the invention.

Although the compressed air is mainly sprayed to remove the contaminantin the above-described embodiment, as shown in FIG. 51, instead of thecompressed air, it is also possible that ultrasonic air is blown towardthe contaminant which adheres to the source gas introduction pipe. FIG.51 is a partial conceptual view of the upper portion of the depositionchamber when ultrasonic air blowing means is provided instead of thecompressed air spraying means. The air is supplied from air supplyingmeans 14 for ultrasonic air blowing means to ultrasonic air blowingmeans 7. An ultrasonic oscillator included in the ultrasonic air blowingmeans 7 gives vibration by ultrasound to the air, and the ultrasonic airis blown from a blow portion (not shown) toward the contaminant. Thisallows the contaminant to be removed as in the case of the spray of thecompressed air. The contaminant is sucked and removed by the suction andexhausting means 4 connected to a suction and exhaust portion (notshown) installed in the ultrasonic air blowing means 7. It is preferablethat the suction and exhaust portion is provided above the ultrasonicair blow portion, and it is more preferable that the suction and exhaustportion is provided above the ultrasonic air blow portion and around theoutside of the source gas introduction pipe. As in the case of the sprayof the compressed air, it is more preferable that the blow portion,suction and exhaust portion, and the second blow portion aresequentially arranged in the axial direction from the lower portion tothe upper portion of the source gas introduction pipe. More preferably,the blow portion, suction and exhaust portion, and the second blowportion are provided around the outside of the source gas introductionpipe respectively. Although the mode in which the ultrasonic air isblown from one direction is shown in FIG. 51, it is more preferable thatthe ultrasonic air blown from the centripetal direction with respect tothe axis of the source gas introduction pipe.

Cleaning Evaluation Experiment 1 of Source Gas Introduction Pipe whichalso Acts as Inner Electrode

[Inside Chamber Compressed Air Blow Method]

In a process of extracting the source gas introduction pipe from theplastic container after the CVD film is formed on the inner surface ofthe plastic container, the mechanism in which, while the compressed airis sprayed toward the contaminant which adheres to the outer surface ofthe source gas introduction pipe and mainly contains the carbon powder,the contaminant is exhausted outside the deposition chamber system bythe powerful suction and exhausting means so that the contaminantremoved from the outer surface of the source gas introduction pipe bythe spray of the compressed air is not transferred to the sides of thedeposition chamber and the plastic container in which the CVD film isformed will be specifically described below. A cleaning evaluation wasperformed on the following conditions using the apparatus shown in FIG.1.

1. Deposition Process Conditions

a) Evacuation System

An ultimate pressure was set to 6.65 Pa, and a deposition pressure wasset to 26.6 Pa. At this point, the pressure is a degree of vacuum at theevacuation manifold.

b) Gas Supply System

The kind of the gas was C₂H₂ (acetylene), and a gas flow rate was set to50 sccm. A gas stabilizing time was set to 1.0 second until thedeposition was started after the deposition chamber reached thedeposition pressure.

c) RF (High Frequency) Supply System

RF output was set to 400 W, the frequency was set to 13.56 MHz, and adischarge time was 3.0 seconds.

2. Cleaning Conditions (Air Supply System)

a) Compressed Air Spray System

An air supply pressure was set to 0.3 MPa, and an air supply flow ratewas set to 170 1/min.

b) Suction and Exhaust System (Dust Exhaust System)

An exhaust flow rate was set to 180 1/min.

c) Elevating Condition of Source Gas Introduction Pipe which also Actsas Inner Electrode

In cylinder elevating speed, rise speed was set to about 1.1 seconds andfall speed was set to about 0.5 second. A stroke length of the elevationwas set to 295 mm.

3. Work (Inner Electrode Specifications)

a) The Size a BA Pipe was Set to 6.35 mm in Diameter.

b) Au Alloy Plating was Performed to the Inner Electrode as SurfaceTreatment.

4. Measurement Items

a) The inner electrode was observed with an optical microscope(macrophotograph (50 times)). The number of observation points was setto four (bottom portion, body portion, bottle mouth portion, and exhaustmanifold portion). The number of observations was set to five (initialstate-first day (501 times)-second day (2000 times)-third day (4500times)-fourth day (7000 times)).

b) A surface resistance value of the inner electrode was measured. Thenumber of measurement points was set to four (bottom portion, bodyportion, bottle mouth portion, and exhaust manifeold portion). Thenumber of measurements was set to five (initial state-first day (501times)-second day (2000 times)-third day (4500 times)-fourth day (7000times)). In this case, because there is presence or absence of the filmon a circumference of the measurement point, it is considered that thesurface resistance value is an auxiliary value.

The measurement points A, B, C, and D in a) and b) were as follows: An Aportion was set to the bottom portion (located 10 mm above a leading endof the inner electrode). At this point, the leading end of the innerelectrode was set 25 mm above a bottom electrode. B portion was set tothe body portion (located 60 mm above the A portion). C portion was setto the bottle mouth portion (located 100 mm above the B portion). Dportion was set to the exhaust manifold portion (located 60 mm above theC portion). FIG. 39 shows a position relationship among the measurementpoints.

c) Measurement of Reflected Wave

High-frequency output was 400 W, deposition time was 3.0 seconds, andmeasurements were performed at 1 batch, 100 batches, . . . , 7000batches.

d) Bottle Sampling

Barrier properties measurement samplings were obtained from 1 batch, 500batches, . . . , 7000 batches. Film thickness visual inspectionsamplings were obtained from 1 batch, 100 batches, . . . , 7000 batches.

5. Experimental Result

a) Observation of Inner Electrode with Optical Microscope

The optical microscope observation results after the completion of 500batches were as follows: FIG. 3 shows an inner electrode photographafter the completion of 500 batches, FIG. 4 shows the A part of an innerelectrode bottom portion macrophotograph (50 times) after the completionof 500 batches, FIG. 5 shows the B part of an inner electrode bodyportion macrophotograph (50 times) after the completion of 500 batches,FIG. 6 shows the C part of an inner electrode bottle mouth portionmacrophotograph (50 times) after the completion of 500 batches, and FIG.7 shows the D part of an inner electrode exhaust manifold portionmacrophotograph (50 times) after the completion of 500 batches.

The optical microscope observation results after the completion of 2000batches were as follows: FIG. 8 shows the inner electrode photographafter the completion of 2000 batches, FIG. 9 shows the A part of theinner electrode bottom portion macrophotograph (50 times) after thecompletion of 2000 batches, FIG. 10 shows the B part of the innerelectrode body portion macrophotograph (50 times) after the completionof 2000 batches, FIG. 11 shows the C part of the inner electrode bottlemouth portion macrophotograph (50 times) after the completion of 2000batches, and FIG. 12 shows the D part of the inner electrode exhaustmanifold portion macrophotograph (50 times) after the completion of 2000batches.

The optical microscope observation results after the completion of 4500batches were as follows: FIG. 13 shows the inner electrode photograph,FIG. 14 shows the A part of the inner electrode bottom portionmacrophotograph (50 times) after the completion of 4500 batches, FIG. 15shows the B part of the inner electrode body portion macrophotograph (50times) after the completion of 4500 batches, and FIG. 16 shows the Cpart of the inner electrode bottle mouth portion macrophotograph (50times) after the completion of 4500 batches. In this case, theaccompanying drawing of the D part of the inner electrode exhaustmanifold portion macrophotograph (50 times) was lost because image datawas broken.

The optical microscope observation results after the completion of 7000batches were as follows: FIG. 17 shows the inner electrode photographafter the completion of 7000 batches, FIG. 18 shows the A part of theinner electrode bottom portion macrophotograph (50 times) after thecompletion of 7000 batches, FIG. 19 shows the B part of the innerelectrode body portion macrophotograph (50 times) after the completionof 7000 batches, FIG. 20 shows the C part of the inner electrode bottlemouth portion macrophotograph (50 times) after the completion of 7000batches, and FIG. 21 shows the D part of the inner electrode exhaustmanifold portion macrophotograph (50 times) after the completion of 7000batches.

b) Measurement of Surface Resistance Value of Inner Electrode

Table 1 shows the surface resistance value.

c) Measurement of Reflected Wave

Table 2 shows the measurement value of the reflected wave. Table 2 showsthat the plasma is stably generated as the reflected wave is decreased.TABLE 1 Bottle Measurement Bottom Body Mouth Exhaust Date (batch)Portion (Ω) Portion (Ω) portion (Ω) manifold (Ω) First Day 0˜0.2 0˜0.20˜0.2 0˜0.2 (1 batch) Second Day 0˜0.2 0˜0.5 4.5M ∞ (501 batch) ThirdDay 0˜0.2 0˜0.1 ∞ ∞ (4500 batch) Fourth Day 0˜0.4 0.5˜1.2   ∞ ∞ (7000batch)

TABLE 2 The Reflected number of wave Batches (w) 1 4 100 5 200 5 300 5400 5 500 5 600 4 700 5 800 4 900 4 1000 4 1100 5 1200 4 1300 5 1400 51500 5 1600 5 1700 5 1800 5 1900 5 2000 5 2100 5 2200 5 2300 5 2400 52500 5 2600 4 2700 5 2800 5 2900 5 3000 5 3100 5 3200 5 3300 5 3400 53500 5 3600 5 3700 5 3800 4 3900 4 4000 5 4100 4 4200 5 4300 5 4400 54500 5 4600 4 4700 5 4800 4 4900 5 5000 5 5100 5 5200 6 5300 6 5400 65500 7 5600 5 5700 6 5800 5 5900 5 6000 4 6100 5 6200 7 6300 4 6400 56500 4 6600 5 6700 5 6800 5 6900 4 7000 4d) Bottle Sampling

When the visual inspection was performed to the film thickness visualinspection samplings (1 batch, 100 batches, . . . , 7000 batches), itwas not perceived that there were variations in film thickness. When thebarrier properties were measured for the barrier properties measurementsamplings (1 batch and 7000 batches), there was no difference.

6. Summary

a) Surface State of Inner Electrode (see Macrophotograph)

Form 500 batches until after the completion of 7000 batches, the largechange was not observed in the adhesion state of the film. The film(contaminant) which adhered to the exhaust manifold portion and thebottle mouth portion in a concentrated manner was found. Density of thefilm (contaminant) was thin in the bottom portion and the body portion.The adhesion of the film (contaminant) was weak and easy to flake awayin the exhaust manifold portion.

b) Surface Resistance Value of Inner Electrode

In the exhaust manifold portion and the bottle mouth portion, thesurface was insulated before the number of discharges became larger.From the initial state until after the completion of 7000 batches, thelarge change was not observed in the bottom portion and the bodyportion.

c) Reflected Wave and Matching Point

From the initial state until after the completion of 7000 batches, thereflected wave was stable in the range of 4 to 7 W. The matching pointwas also stable from the initial state until after the completion of7000 batches. The discharge state was also stable through the experiment(by visual confirmation from a viewport).

From the results of a), b), and c), the stable discharge and the stabledeposition could be always performed until after the completion of 7000batches.

The inner electrode cleaning evaluation experiment which is of anotherexample of the invention will be described below. Cleaning EvaluationExperiment 2 of Source Gas Introduction Pipe which also Acts as InnerElectrode

[Outside Chamber Ultrasonic Air Blow Method]

The experiment was performed with the apparatus shown in FIGS. 51 and22. As shown in FIGS. 22A to 22E, the cleaning is performed (see FIG.22B) after the completion of the deposition (see FIG. 22A). Anultrasonic unit (ultrasonic air blowing means) proceeds and theultrasonic air is blown to the contaminant adhering to the innerelectrode. The inner electrode is elevated and cleaned to the leadingend (lowest position) of the inner electrode by the blow of theultrasonic air (see FIG. 22C). The cleaning is performed while the innerelectrode rises. The ultrasonic unit is retracted from the innerelectrode while the inner electrode falls down from the uppermostposition (see FIG. 22D). Finally the inner electrode falls down to beaccommodated into the plastic container, and the deposition chamberbecomes the sealed state (see FIG. 22E).

1. Deposition Process Conditions

a) Evacuation System

The conditions were set in a manner similar to the inside chamber airblow method.

b) Gas Supply System

The conditions were set in a manner similar to the inside chamber airblow method.

c) RF (High Frequency) Supply System

The conditions were set in a manner similar to the inside chamber airblow method.

2. Cleaning Conditions

a) Ultrasonic Air Blow System (Air Supply System)

The air supply pressure was set to 0.3 MPa, and the air supply flow ratewas set to 160 l/min.

b) Suction and Exhaust System (Dust Exhaust System)

The exhaust flow rate was set to 180 l/min.

c) Frequency of Ultrasonic Wave

The frequency ranged from 20 KHz to 4 MHz. The example was performed atthe frequency of 100 kHz.

d) Elevating Condition of Source Gas Introduction Pipe which also Actsas Inner Electrode

In the cylinder elevating speed, the rise speed was set to about 0.7second and the fall speed was set to about 0.9 second. The stroke lengthof the elevation was set to 295 mm.

3. Work (Inner Electrode Specifications)

The conditions were set in a manner similar to the inside chamber airblow method.

4. Measurement Items

a) The Inner electrode was observed with the optical microscope in amanner similar to the inside chamber air blow method.

b) The surface resistance value of the inner electrode was measured. Theconditions were set in a manner similar to the inside chamber air blowmethod.

c) Measurement of Reflected Wave

The high-frequency output was 400 W, the deposition time was 3.0seconds, and the measurements were performed at 1 batch, 100 batches, .. . , 7000 batches.

d) Bottle Sampling

The conditions were set in a manner similar to the inside chamber airblow method.

5. Experimental Result

a) Observation of Inner Electrode with Optical Microscope

The optical microscope observation results after the completion of 500batches were as follows: FIG. 23 shows an inner electrode photographafter the completion of 500 batches. The macrophotographs of the A, B,C, and D portions are not attached.

The optical microscope observation results after the completion of 2000batches were as follows: FIG. 24 shows the inner electrode photographafter the completion of 2000 batches, FIG. 25 shows the A part of theinner electrode bottom portion macrophotograph (50 times) after thecompletion of 2000 batches, FIG. 26 shows the B part of the innerelectrode body portion macrophotograph (50 times) after the completionof 2000 batches, FIG. 27 shows the C part of the inner electrode bottlemouth portion macrophotograph (50 times), and FIG. 28 shows the D partof the inner electrode exhaust manifold portion macrophotograph (50times) after the completion of 2000 batches.

The optical microscope observation results after the completion of 4500batches were as follows: FIG. 29 shows the inner electrode photographafter the completion of 4500 batches, FIG. 30 shows the A part of theinner electrode bottom portion macrophotograph (50 times) after thecompletion of 4500 batches, FIG. 31 shows the B part of the innerelectrode body portion macrophotograph (50 times) after the completionof 4500 batches, FIG. 32 shows the C part of the inner electrode bottlemouth portion macrophotograph (50 times) after the completion of 4500batches, and FIG. 33 shows the D part of the inner electrode exhaustmanifold portion macrophotograph (50 times) after the completion of 4500batches.

The optical microscope observation results after the completion of 7000batches were as follows: FIG. 34 shows the inner electrode photographafter the completion of 7000 batches, FIG. 35 shows the A part of theinner electrode bottom portion macrophotograph (50 times) after thecompletion of 7000 batches, FIG. 36 shows the B part of the innerelectrode body portion macrophotograph (50 times) after the completionof 7000 batches, FIG. 37 shows the C part of the inner electrode bottlemouth portion macrophotograph (50 times) after the completion of 7000batches, and FIG. 38 shows the D part of the inner electrode exhaustmanifold portion macrophotograph (50 times) after the completion of 7000batches.

b) Measurement of Surface Resistance Value of Inner Electrode

Table 3 shows the surface resistance value.

c) Reflected Wave

Table 4 shows the measurement value of the reflected wave.

d) Bottle Sampling

When the visual inspection was performed to the film thickness visualinspection samplings (1 batch, 100 batches, . . . , 7000 batches), itwas not perceived that there were variations in film thickness. When thebarrier properties were measured for the barrier properties measurementsamplings (1 batch and 7000 batches), there was no difference. TABLE 3Bottom Body Bottle Mouth Exhaust Measurement date Portion PortionPortion manifold (batch) (Ω) (Ω) (Ω) (Ω) First Day (1 batch) — — — —Second Day (501 batch) 0.1 10˜15 2.3˜2.5 ∞ Third Day (4500 batch)0.3˜0.4 8.1˜9.0  66k ∞ Fourth Day (7000 batch) 1.4 7.8 4.0M ∞

TABLE 4 Reflected The number Wave of Batches (W) 1 5 100 5 200 5 300 5400 5 500 4 600 4 700 4 800 4 900 5 1000 4 1100 5 1200 5 1300 5 1400 51500 5 1600 5 1700 5 1800 4 1900 5 2000 5 2100 4 2200 5 2300 5 2400 52500 5 2600 4 2700 5 2800 5 2900 5 3000 5 3100 5 3200 5 3300 5 3400 53500 5 3600 5 3700 5 3800 5 3900 5 4000 5 4100 6 4200 5 4300 5 4400 54500 5 4600 5 4700 6 4800 5 4900 5 5000 6 5100 6 5200 5 5300 5 5400 55500 6 5600 5 5700 4 5800 5 5900 4 6000 5 6100 5 6200 5 6300 5 6400 56500 5 6600 4 6700 5 6800 5 6900 5 7000 56. Summarya) Surface State of Inner Electrode

In the bottom portion, the bottle mouth portion, and the exhaustmanifold portion of the electrode, the amount of adhesion of the film(contaminant) was clearly increased because the ultrasonic air did notreach these portions. In the portion onto which the ultrasonic airimpinged in the short range (5 mm), it was not perceived that there wasthe large difference between the ultrasonic air blow surface and thebackside of the ultrasonic air blow surface in the amount of adhesion ofthe film (contaminant).

b) Measurement of Surface Resistance Value of Inner Electrode

The large change was not observed in the bottom portion and the bodyportion. In the bottle mouth portion and the exhaust manifold portion,the insulation state advanced every time the discharge was performed.Since the ultrasonic air did not impinge on the exhaust manifold portionand the bottle mouth portion at all, degradation advances significantly.

c) Reflected Wave and Matching Point

From the initial state until after the completion of 7000 batches, thereflected wave was stable in the range of 4 to 6 W. After the completionof about 4000 batches, it was recognized that the discharge becameunstable (degree that discharge plasma slightly flickers by the visualobservation of the plasma). At this point, the reflected wave alsolargely flickers like 9→25→6→5. The matching point was stable from theinitial state until after the completion of 7000 batches.

COMPARATIVE EXAMPLE

The effect of the electrode cleaning was verified by examining thedischarge status and the state of the electrode in the case where theinner electrode is not cleaned. The experiment was performed with theapparatus similar to the apparatus shown in FIG. 1 on condition that thecleaning device was not operated.

1. Deposition Process Conditions

Table 5 shows the conditions. TABLE 5 c) RF Supply a) Vacuum System b)Gas Supply System System Ultimate pressure: 6.65 Pa Kind of Gas: C₂H₂(acetylene) RF output: Deposition pressure: Gas flow rate: 50 sccm 400 W26.6 Pa Gas stabilizing time: 1.0 sec Frequency: 13.56 MHz Dischargetime: 3.0 secNote:these pressures were a dgree of vacuum measured at the exhaust manifold2. Work (Inner Electrode Specifications)

The conditions were set in a manner similar to the inside chamber airblow method.

3. Measurement Items

a) The inner electrode was observed with the optical microscope (innerelectrode macrophotograph (50 times)). The number of observation pointswas set to four (bottom portion, body portion, bottle mouth portion, andexhaust manifold portion). However, the number of observations was setto two, i.e. 500 batches and 600 batches. Namely, the discharge couldnot be performed at 600 batches, so that 600 batches were set to theupper limit deposition time.

b) The surface resistance value of the inner electrode was measured. Thenumber of measurement points was set to four (bottom portion, bodyportion, bottle mouth portion, and exhaust manifold portion). However,the number of measurements was set to two, i.e. 500 batches and 600batches. Namely, the discharge could not be performed at 600 batches, sothat 600 batches were set to the upper limit deposition time.

The measurement points A, B, C, and D in a) and b) were set in a mannersimilar to the inside chamber air blow method.

c) Measurement of Reflected Wave

The high-frequency output was 400 W, the deposition time was 3.0seconds, and the measurements were performed at 1, 50, 100, . . . , 600batches.

d) Bottle Sampling

The barrier properties measurement sampling was obtained from 1 batchand 500 batches. The film thickness visual inspection sampling wasobtained from 1, 100, . . . , 500 batches.

4. Experimental Results

a) Observation of Inner Electrode with Optical Microscope

The optical microscope observation results after the completion ofnon-cleaning 500 batches were as follows: FIG. 40 shows the innerelectrode photograph of Comparative Example after the completion ofnon-cleaning 500 batches, FIG. 41 shows the A part of the innerelectrode bottom portion macrophotograph (50 times) of ComparativeExample after the completion of non-cleaning 500 batches, FIG. 42 showsthe B part of the inner electrode body portion macrophotograph (50times) of Comparative Example after the completion of non-cleaning 500batches, FIG. 43 shows the C part of the inner electrode bottle mouthportion macrophotograph (50 times) of Comparative Example after thecompletion of non-cleaning 500 batches, and FIG. 44 shows the D part ofthe inner electrode exhaust manifold portion macrophotograph (50 times)of Comparative Example after the completion of non-cleaning 500 batches.

The optical microscope observation results after the completion ofnon-cleaning 600 batches were as follows: FIG. 45 shows the innerelectrode photograph of Comparative Example after the completion ofnon-cleaning 600 batches, FIG. 46 shows the A part of the innerelectrode bottom portion macrophotograph (50 times) of ComparativeExample after the completion of non-cleaning 600 batches, FIG. 47 showsthe B part of the inner electrode body portion macrophotograph (50times) of Comparative Example after the completion of non-cleaning 600batches, FIG. 48 shows the C part of the inner electrode bottle mouthportion macrophotograph (50 times) of Comparative Example after thecompletion of non-cleaning 600 batches, and FIG. 49 shows the D part ofthe inner electrode exhaust manifold portion macrophotograph (50 times)of Comparative Example after the completion of non-cleaning 600 batches.

b) Measurement of Surface Resistance Value of Inner Electrode

Table 6 shows the surface resistance value.

c) Reflected Wave

Table 7 shows the measurement value of the reflected wave.

d) Bottle Sampling

When the barrier properties were measured for the barrier propertiesmeasurement samplings (1 batch and 500 batches), there was nodifference. When the visual inspection was performed to the filmthickness visual inspection samplings (1, 100, . . . , 500 batches), itwas not perceived that there were variations in film thickness.

5. Summary

a) Surface State of Inner Electrode

The many films (contaminant) which adhered at the time when 500 batcheswere completed was found. The film (contaminant) which adhered to theexhaust manifold portion and the bottle mouth portion in a concentratedmanner was found.

b) Measurement of Surface Resistance Value of Inner Electrode

In the C portion (bottle mouth portion) and the D portion (manifoldportion), the electrical resistance showed the large value at the timewhen 500 batches were completed. In the electrode in which the dischargecould not be performed after the completion of 600 batches, all thepoints A, B, C, and, D were insulated.

c) Reflected Wave and Matching Point

Until after the completion of 50 batches, the reflected wave was stablein the range of 4 to 6 W. After the completion of 100 batches, it wasrecognized that the reflected wave was disturbed. After the completionof 300 batches, the ratio of the disturbance of the reflected wave wasincreased (about 80%). The discharge could not be performed at the timewhen the depositions of about 600 batches were completed. When theelectrode was changed to the new one, since the stable dischargeoccurred, it can be assumed that the film (contaminant) which adheres tothe electrode causes the disturbance of the discharge.

When the inside chamber air blow method (Embodiment 1) and the outsidechamber ultrasonic air blow method (Embodiment 2) were compared with thenon-cleaning (Comparative Example), the advantage of the inner electrodecleaning according to the embodiments could be confirmed. TABLE 6Surface resestance value Bottom Body Bottle Mouth Exhaust PortionPortion Portion manifold (Batch) (Ω) (Ω) (Ω) (Ω) 500 0.03 0.05 9.7M7.47M 600 ∞ ∞ ∞ ∞

TABLE 7 Reflected wave

1-24. (canceled)
 25. A method for cleaning a source gas introductionpipe used in a CVD apparatus, which cleans contaminant mainly containingcarbon powder adhering to an outer surface of the source gasintroduction pipe during processes in which a plastic bottle isaccommodated into a sealable deposition chamber having a function of anouter electrode, source gas is introduced from a source gas introductionpipe which is elevatably inserted into the plastic bottle and also actsas an inner electrode, and the source gas is excited into plasma to forma CVD (Chemical Vapor Deposition) film on an inner surface of theplastic bottle, wherein while compressed air is sprayed toward thecontaminant, the contaminant is exhausted outside a system of thedeposition chamber by suction and exhausting means so that thecontaminant removed by the spray of the compressed air is nottransferred to sides of the deposition chamber and the plastic containerin which the CVD film is formed in a process for extracting the sourcegas introduction pipe from the plastic container after the CVD film isformed on the inner surface of the plastic container.
 26. The method forcleaning a source gas introduction pipe used in a CVD apparatusaccording to claim 25, wherein the compressed air is sprayed toward acentripetal direction of the source gas introduction pipe from acompressed air spray portion provided in an upper portion of thedeposition chamber or at a position above the deposition chamber. 27.The method for cleaning a source gas introduction pipe used in a CVDapparatus according to either one of claims 25 or 26, wherein thecompressed air and the contaminant are sucked and removed into a suctionand exhaust portion provided at the position above the spray portion bythe suction and exhausting means.
 28. The method for cleaning a sourcegas introduction pipe used in a CVD apparatus according to claim 25,wherein the compressed air spray portion is provided in the upperportion of the deposition chamber or at the position above thedeposition chamber, the suction and exhaust portion is provided at theposition above the spray portion, a second compressed air spray portionis provided at the position above the suction and exhaust portion, thespray portion sprays the compressed air from the bottom toward the top,the second spray portion sprays the compressed air from the top towardthe bottom, and the suction and exhaust portion sucks and removes thecompressed air and the contaminant.
 29. The method for cleaning a sourcegas introduction pipe used in a CVD apparatus according to any one ofclaims 25, 26, or 28, wherein the amount of suction and exhaust by thesuction and exhausting means is larger than the amount of air supply ofthe compressed air.
 30. The method for cleaning a source gasintroduction pipe used in a CVD apparatus according to claim 27, whereinthe amount of suction and exhaust by the suction and exhausting means islarger than the amount of air supply of the compressed air.
 31. Themethod for cleaning a source gas introduction pipe used in a CVDapparatus according to any one of claims 25, 26, or 28, whereindeposition of the CVD film is separately performed in the plurality ofdeposition chambers arranged in a circle on a turntable, the contaminantmainly containing the carbon powder which adhere to the outer surface ofthe source gas introduction pipe is removed by spraying the compressedair in the process for extracting the source gas introduction pipe fromthe plastic container, and the process for sucking and exhausting theremoved contaminant outside the system of the deposition chamber iscompleted, while the turntable is rotated one turn.
 32. The method forcleaning a source gas introduction pipe used in a CVD apparatusaccording to claim 27, wherein deposition of the CVD film is separatelyperformed in the plurality of deposition chambers arranged in a circleon a turntable, the contaminant mainly containing the carbon powderwhich adhere to the outer surface of the source gas introduction pipe isremoved by spraying the compressed air in the process for extracting thesource gas introduction pipe from the plastic container, and the processfor sucking and exhausting the removed contaminant outside the system ofthe deposition chamber is completed, while the turntable is rotated oneturn.
 33. The method for cleaning a source gas introduction pipe used ina CVD apparatus according to claim 29, wherein deposition of the CVDfilm is separately performed in the plurality of deposition chambersarranged in a circle on a turntable, the contaminant mainly containingthe carbon powder which adhere to the outer surface of the source gasintroduction pipe is removed by spraying the compressed air in theprocess for extracting the source gas introduction pipe from the plasticcontainer, and the process for sucking and exhausting the removedcontaminant outside the system of the deposition chamber is completed,while the turntable is rotated one turn.
 34. A method for cleaning asource gas introduction pipe used in a CVD apparatus, which cleanscontaminant mainly containing carbon powder adhering to an outer surfaceof the source gas introduction pipe during processes in which a plasticbottle is accommodated into a sealable deposition chamber having afunction of an outer electrode, source gas is introduced from a sourcegas introduction pipe which is elevatably inserted into the plasticbottle and also acts as an inner electrode, and the source gas isexcited into plasma to form a CVD (Chemical Vapor Deposition) film on aninner surface of the plastic bottle, wherein while ultrasonic air isblown toward the contaminant, the contaminant is exhausted outside asystem of the deposition chamber by suction and exhausting means so thatthe contaminant removed by the blow of the ultrasonic air is nottransferred to sides of the deposition chamber and the plastic containerin which the CVD film is formed in a process for extracting the sourcegas introduction pipe from the plastic container after the CVD film isformed on the inner surface of the plastic container.
 35. The method forcleaning a source gas introduction pipe used in a CVD apparatusaccording to claim 34, wherein the ultrasonic air is blown toward acentripetal direction of the source gas introduction pipe from anultrasonic air blow portion provided in an upper portion of thedeposition chamber or at a position above the deposition chamber. 36.The method for cleaning a source gas introduction pipe used in a CVDapparatus according to either one of claims 34 or 35, wherein theultrasonic air and the contaminant are sucked and removed into a suctionand exhaust portion provided at the position above the blow portion bythe suction and exhausting means.
 37. The method for cleaning a sourcegas introduction pipe used in a CVD apparatus according to claim 34,wherein the ultrasonic air blow portion is provided in the upper portionof the deposition chamber or at the position above the depositionchamber, the suction and exhaust portion is provided at the positionabove the blow portion, a second ultrasonic air blow portion is providedat the position above the suction and exhaust portion, the blow portionblows the ultrasonic air from the bottom toward the top and the secondblow portion blows the ultrasonic air from the top toward the bottom,and the suction and exhaust portion sucks and removes the ultrasonic airand the contaminant.
 38. The method for cleaning a source gasintroduction pipe used in a CVD apparatus according to any one of claims34, 35, or 37, wherein the amount of suction and exhaust by the suctionand exhausting means is larger than the amount of air supply of theultrasonic air.
 39. The method for cleaning a source gas introductionpipe used in a CVD apparatus according to claim 36, wherein the amountof suction and exhaust by the suction and exhausting means is largerthan the amount of air supply of the ultrasonic air.
 40. The method forcleaning a source gas introduction pipe used in a CVD apparatusaccording to any one of claims 34, 35, or 37, wherein deposition of theCVD film is separately performed in the plurality of deposition chambersarranged in a circle on a turntable, the contaminant mainly containingthe carbon powder which adhere to the outer surface of the source gasintroduction pipe is removed by blowing the ultrasonic air in theprocess for extracting the source gas introduction pipe from the plasticcontainer, and the process for sucking and exhausting the removedcontaminant outside the system of the deposition chamber is completed,while the turntable is rotated one turn.
 41. The method for cleaning asource gas introduction pipe used in a CVD apparatus according to claim36, wherein deposition of the CVD film is separately performed in theplurality of deposition chambers arranged in a circle on a turntable,the contaminant mainly containing the carbon powder which adhere to theouter surface of the source gas introduction pipe is removed by blowingthe ultrasonic air in the process for extracting the source gasintroduction pipe from the plastic container, and the process forsucking and exhausting the removed contaminant outside the system of thedeposition chamber is completed, while the turntable is rotated oneturn.
 42. The method for cleaning a source gas introduction pipe used ina CVD apparatus according to claim 38, wherein deposition of the CVDfilm is separately performed in the plurality of deposition chambersarranged in a circle on a turntable, the contaminant mainly containingthe carbon powder which adhere to the outer surface of the source gasintroduction pipe is removed by blowing the ultrasonic air in theprocess for extracting the source gas introduction pipe from the plasticcontainer, and the process for sucking and exhausting the removedcontaminant outside the system of the deposition chamber is completed,while the turntable is rotated one turn.
 43. The method for cleaning asource gas introduction pipe used in a CVD apparatus according to claim39, wherein deposition of the CVD film is separately performed in theplurality of deposition chambers arranged in a circle on a turntable,the contaminant mainly containing the carbon powder which adhere to theouter surface of the source gas introduction pipe is removed by blowingthe ultrasonic air in the process for extracting the source gasintroduction pipe from the plastic container, and the process forsucking and exhausting the removed contaminant outside the system of thedeposition chamber is completed, while the turntable is rotated oneturn.
 44. An apparatus for cleaning a source gas introduction pipe usedin a CVD apparatus, which cleans contaminant mainly containing carbonpowder adhering to an outer surface of the source gas introduction pipeduring processes in which a plastic bottle is accommodated into asealable deposition chamber having a function of an outer electrode,source gas is introduced from a source gas introduction pipe which iselevatably inserted into the plastic bottle and also acts as an innerelectrode, and the source gas is excited into plasma to form a CVD(Chemical Vapor Deposition) film on an inner surface of the plasticbottle, comprising source gas introduction pipe extracting means forextracting the source gas introduction pipe from the plastic containerin synchronization with a time after the formation of the CVD film onthe inner surface of the plastic container, compressed air sprayingmeans for spraying compressed air toward the contaminant, and suctionand exhausting means for exhausting the contaminant removed by the sprayof the compressed air outside a system of the deposition chamber so thatthe contaminant is not transferred to sides of the deposition chamberand the plastic container in which the CVD film is formed.
 45. Theapparatus for cleaning a source gas introduction pipe used in a CVDapparatus according to claim 44, wherein a spray portion of thecompressed air sprayed by the compressed air spraying means is arrangedaround the outside of the source gas introduction pipe and in an upperportion of the deposition chamber or at a position above the depositionchamber.
 46. The apparatus for cleaning a source gas introduction pipeused in a CVD apparatus according to either one of claims 44 or 45,wherein a suction and exhaust portion for sucking and removing thecompressed air and the contaminant is arranged around the outside of thesource gas introduction pipe and at the position above the sprayportion.
 47. The apparatus for cleaning a source gas introduction pipeused in a CVD apparatus according to claim 44, wherein the spray portionof the compressed air sprayed by the compressed air spraying means isarranged around the outside of the source gas introduction pipe and inthe upper portion of the deposition chamber or at the position above thedeposition chamber, the suction and exhaust portion for sucking andremoving the compressed air and the contaminant is arranged around theoutside of the source gas introduction pipe and at the position abovethe spray portion, a second spray portion of the compressed air sprayedby the compressed air spraying means is arranged around the outside ofthe source gas introduction pipe and at the position above the suctionand exhaust portion, a compressed air spray direction of the sprayportion is orientated upward, and the compressed air spray direction ofthe second spray portion is orientated downward.
 48. An apparatus forcleaning a source gas introduction pipe used in a CVD apparatus, whichcleans contaminant mainly containing carbon powder adhering to an outersurface of the source gas introduction pipe during processes in which aplastic bottle is accommodated into a sealable deposition chamber havinga function of an outer electrode, source gas is introduced from a sourcegas introduction pipe which is elevatably inserted into the plasticbottle and also acts as an inner electrode, and the source gas isexcited into plasma to form a CVD (Chemical Vapor Deposition) film on aninner surface of the plastic bottle, comprising source gas introductionpipe extracting means for extracting the source gas introduction pipefrom the plastic container in synchronization with a time after theformation of the CVD film on the inner surface of the plastic container,ultrasonic air blowing means for blowing ultrasonic air toward thecontaminant, and suction and exhausting means for exhausting thecontaminant removed by the blow of the ultrasonic air outside a systemof the deposition chamber so that the contaminant is not transferred tosides of the deposition chamber and the plastic container in which theCVD film is formed.
 49. The apparatus for cleaning a source gasintroduction pipe used in a CVD apparatus according to claim 48, whereina blow portion of the ultrasonic air blown by the ultrasonic air blowingmeans is arranged in an upper portion of the deposition chamber or at aposition above the deposition chamber.
 50. The apparatus for cleaning asource gas introduction pipe used in a CVD apparatus according to eitherone of claims 48 or 49, wherein a suction and exhaust portion forsucking and removing the ultrasonic air and the contaminant is arrangedat the position above the blow portion.
 51. The apparatus for cleaning asource gas introduction pipe used in a CVD apparatus according to claim48, wherein the blow portion of the ultrasonic air blown by theultrasonic air blowing means is arranged in the upper portion of thedeposition chamber or at the position above the deposition chamber, thesuction and exhaust portion for sucking and removing the ultrasonic airand the contaminant is arranged at the position above the blow portion,a second blow portion of the ultrasonic air blown by the ultrasonic airblowing means is arranged at the position above the suction and exhaustportion, an ultrasonic air blow direction of the blow portion isorientated upward, and the ultrasonic air blow direction of the secondblow portion is orientated downward.
 52. A method for cleaning a sourcegas introduction pipe used in a CVD apparatus, which cleans contaminantmainly containing carbon powder adhering to an outer surface of thesource gas introduction pipe during processes in which a plastic bottleis accommodated into a sealable deposition chamber having a function ofan outer electrode, source gas is introduced from a source gasintroduction pipe which is elevatably inserted into the plastic bottle,and the source gas is excited into plasma with a micro wave to form aCVD (Chemical Vapor Deposition) film on an inner surface of the plasticbottle, wherein while compressed air is sprayed toward the contaminantor ultrasonic air is blown toward the contaminant, the contaminantremoved by the spray of the compressed air or the blow of the ultrasonicair is exhausted outside a system of the deposition chamber by suctionand exhausting means so that the contaminant is not transferred to sidesof the deposition chamber and the plastic container in which the CVDfilm is formed in a process for extracting the source gas introductionpipe from the plastic container after the CVD film is formed on theinner surface of the plastic container.
 53. An apparatus for cleaning asource gas introduction pipe used in a CVD apparatus, which cleanscontaminant mainly containing carbon powder adhering to an outer surfaceof the source gas introduction pipe during processes in which a plasticbottle is accommodated into a sealable deposition chamber having afunction of an outer electrode, source gas is introduced from a sourcegas introduction pipe which is elevatably inserted into the plasticbottle, and the source gas is excited into plasma with a micro wave toform a CVD (Chemical Vapor Deposition) film on an inner surface of theplastic bottle, comprising source gas introduction pipe extracting meansfor extracting the source gas introduction pipe from the plastic bottlein synchronization with a time after the formation of the CVD film onthe inner surface of the plastic bottle, compressed air spraying meansfor spraying compressed air toward the contaminant, and suction andexhausting means for exhausting the contaminant removed by the spray ofthe compressed air outside a system of the deposition chamber so thatthe contaminant is not transferred to sides of the deposition chamberand the plastic container in which the CVD film is formed.
 54. Anapparatus for cleaning a source gas introduction pipe used in a CVDapparatus, which cleans contaminant mainly containing carbon powderadhering to an outer surface of the source gas introduction pipe duringprocesses in which a plastic bottle is accommodated into a sealabledeposition chamber having a function of an outer electrode, source gasis introduced from a source gas introduction pipe which is elevatablyinserted into the plastic bottle, and the source gas is excited intoplasma with a micro wave to form a CVD (Chemical Vapor Deposition) filmon an inner surface of the plastic bottle, comprising source gasintroduction pipe extracting means for extracting the source gasintroduction pipe from the plastic container in synchronization with atime after the formation of the CVD film on the inner surface of theplastic container, ultrasonic air blowing means for blowing ultrasonicair toward the contaminant, and suction and exhausting means forexhausting the contaminant removed by the blow of the ultrasonic airoutside a system of the deposition chamber so that the contaminant isnot transferred to sides of the deposition chamber and the plasticcontainer in which the CVD film is formed.
 55. The apparatus forcleaning a source gas introduction pipe according to any one of claims44, 45, 47, 48, 49, 51, 52, 53, or 54, wherein a substrate material usedfor the source gas introduction pipe is made of SUS 304 or SUS 316 whosesurface is polished or a material in which SUS 304 or SUS 316 is coatedwith acid hard gold plating such as 99.7Au-0.3Co and 99.8Au-0.2Ni whichis of the material of surface treatment.
 56. The apparatus for cleaninga source gas introduction pipe according to claim 46, wherein asubstrate material used for the source gas introduction pipe is made ofSUS 304 or SUS 316 whose surface is polished or a material in which SUS304 or SUS 316 is coated with acid hard gold plating such as99.7Au-0.3Co and 99.8Au-0.2Ni which is of the material of surfacetreatment.
 57. The apparatus for cleaning a source gas introduction pipeaccording to claim 50, wherein a substrate material used for the sourcegas introduction pipe is made of SUS 304 or SUS 316 whose surface ispolished or a material in which SUS 304 or SUS 316 is coated with acidhard gold plating such as 99.7Au-0.3Co and 99.8Au-0.2Ni which is of thematerial of surface treatment.